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Efficiency enhancement in AlGaN deep ultraviolet light-emitting diodes by adjusting Mg doped staggered barriers

机译：通过调整掺Mg的交错势垒来提高AlGaN深紫外发光二极管的效率

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摘要

Ultraviolet light-emitting diodes (UVLEDs) with staggered barriers have been studied. The energy band diagrams, internal quantum efficiency, total output power and radiative recombination rate are investigated by APSYS software. The simulation results show that the UVLED with staggered barriers get a little enhancement comparing to the conventional one, on the contrary the structure with p-doped staggered barriers has higher efficiency and power due to enhancement of the holes' injection and the electrons' confinement. Then structures with different Al content in the Mg-doped barriers have been studied numerically and that confirmed the best.
机译：已经研究了具有交错栅栏的紫外线发光二极管（UVLED）。用APSYS软件研究了能带图，内部量子效率，总输出功率和辐射复合率。仿真结果表明，具有交错势垒的UVLED与传统的相比具有少许增强，相反，具有p掺杂的交错势垒的结构由于提高了空穴的注入和电子的约束而具有更高的效率和功率。然后，对镁掺杂的势垒中具有不同铝含量的结构进行了数值研究，并确定了最佳方法。

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  • 来源
    《Superlattices and microstructures》 |2017年第7期|49-55|共7页
  • 作者

    Jie Sun Huiqing Sun$; Xinyan Yi; Xian Yang; Tianyi Liu; Xin Wang; Xiu Zhang; Xuancong Fan; Zhuding Zhang; Zhiyou Guo;

  • 作者单位

    Laboratory of Nanophotonic Functional Material and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

    Laboratory of Nanophotonic Functional Material and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

    Laboratory of Nanophotonic Functional Material and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

    Laboratory of Nanophotonic Functional Material and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

    Laboratory of Nanophotonic Functional Material and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

    Laboratory of Nanophotonic Functional Material and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

    Laboratory of Nanophotonic Functional Material and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

    Laboratory of Nanophotonic Functional Material and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

    Laboratory of Nanophotonic Functional Material and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

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  • 正文语种 eng
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  • 关键词

    Efficiency; UVLEDs; Mg doped; Staggered barriers; AlGaN;

    机译：效率;UVLED;镁掺杂;交错的障碍;氮化铝镓;

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