A diode comprises nanowires compositionally graded along their lengths with an active region doped with gadolinium sandwiched between first and second compositionally graded AlxGa1-xN nanowire regions. The first graded AlxGa1-xN nanowire region is graded from gallium-rich to aluminum-rich with the compositional grading defining n-type polarization doping and the aluminum-rich end proximate the active region. The second graded AlxGa1-xN nanowire region is graded from aluminum-rich to gallium-rich with the compositional grading defining p-type polarization doping and with the aluminum rich end proximate the active region. The active region may include a GdN layer sandwiched between AlN layers, or an Al1-yGdyN layer with y≧0.5. The nanowires may be disposed on a silicon substrate having a GaN surface, with the gallium-rich end of the first graded AlxGa1-xN nanowire region proximate to the GaN surface, and a semitransparent electrical contact disposed on the gallium-rich end of the second graded AlxGa1-xN nanowire region.
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机译：二极管包括沿其长度在组成上渐变的纳米线，以及掺杂在第一和第二组成渐变的Al x Ga 1-x N纳米线区域之间的掺杂region的有源区。第一个渐变的Al x Ga 1-x N纳米线区域从富镓到富铝分级，组成渐变定义了n型极化掺杂和铝靠近活动区域的一端。第二个渐变的Al x Ga 1-x N纳米线区域从富铝到富镓，其成分渐变定义了p型极化掺杂，并且铝靠近活动区域的一端。有源区可以包括夹在AlN层之间的GdN层，或者是y≥0.5的Al 1-y Gd y N层。可以将纳米线设置在具有GaN表面的硅基板上，并且第一级Al x Ga 1-x N纳米线区域的富含镓的端部靠近纳米线。 GaN表面，并在第二级Al x Ga 1-x N纳米线区域的富镓端设置半透明电接触。
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