Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance

摘要

Dopingless (DL) and junctionless devices have attracted attention due to their simplified fabrication process and low thermal budget requirements. Therefore, in this work, we investigated the influence of low band gap Germanium (Ge) instead of Silicon (Si) as a "Source region" material in dopingless (DL) tunnel field-effect transistor (DLTFET). We observed that the Ge source DLTFET delivers much better performance in comparison to Si DLTFET under various analog/RF figure of merits (FOMs), such as transconductance (g_m), transconductance generation factor (TGF) (g_m/I_d), output conductance (g_d), output resistance (R_o). intrinsic gain (g_mR_o), intrinsic gate delay (T) and RF FOMs, like unity gain frequency (f_T), gain bandwidth product (GBW) along with various gate capacitances. These parameters were extracted using 2D TCAD device simulations through small signal ac analysis. Higher I_(on)/I_(off) ratio (10~(14)) of Ge source DLTFET can reduce the dynamic as well as static power in digital circuits, while higher transconductance generation factor (g_m/I_d) ~ 2287 V~(-1)can lower the bias power of an amplifier. Similarly, enhanced RF FOMs i.e unity gain frequency (f_T) and gain bandwidth product (GBW) in Gigahertz range projects the proposed device preference for RF circuits.