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Lithium doping and vacancy effects on the structural, electronic and magnetic properties of hexagonal boron nitride sheet: A first-principles calculation

机译:锂掺杂和空位对六方氮化硼片材的结构,电子和磁性的影响:第一性原理计算

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摘要

The first-principles calculations based on spin-polarized density functional theory is carried out to investigate the structural, electronic and magnetic properties of a hexagonal boron nitride sheet (h-BNS) doped by one or two lithium atom(s). Moreover, a vacancy in the neighborhood of one Li-substituted atom is introduced into the system. All optimized structures indicate significant local deformations with Li atom(s) protruded to the exterior of the sheet. The defects considered at N site are energetically more favorable than their counterpart structures at B site. The spin-polarized impurity states appear within the bandgap region of the pristine h-BNS, which lead to a spontaneous magnetization with the largest magnetic moments of about 2 mu(B) in where a single or two B atom(s) are replaced by Li atom(s). Furthermore, the Li substitution for a single B atom increases the density of holes compared to that of electrons forming a p-type semiconductor. More interestingly, the structure in which two Li are substituted two neighboring B atoms appears to show desired half-metallic behavior that may be applicable in spintronic. The results provide a way to enhance the conductivity and magnetism of the pristine h-BNS for potential applications in BN-based nanoscale devices. (C) 2018 Published by Elsevier Ltd.
机译:进行了基于自旋极化密度泛函理论的第一性原理计算,以研究掺杂有一个或两个锂原子的六方氮化硼片(h-BNS)的结构,电子和磁性。此外,将一个Li-取代原子附近的空位引入系统。所有优化的结构都表明显着的局部变形,其中Li原子突出到了板的外部。在N位考虑的缺陷比在B位的对应结构在能量上更有利。自旋极化的杂质态出现在原始h-BNS的带隙区域内,导致自发磁化,最大磁矩约为2μ(B),其中单个或两个B原子被取代锂原子。此外,与形成p型半导体的电子相比,单个B原子的Li取代增加了空穴的密度。更有趣的是,两个Li被两个相邻的B原子取代的结构似乎显示出可用于自旋电子学的所需半金属行为。结果提供了一种增强原始h-BNS的电导率和磁性的方法,可用于基于BN的纳米器件中的潜在应用。 (C)2018由Elsevier Ltd.发布

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