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First-principle study of single TM atoms X (X=Fe, Ru or Os) doped monolayer WS_2 systems

机译:单个TM原子X(X = Fe,Ru或Os)掺杂的单层WS_2系统的第一性原理研究

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We report the structural, magnetic and electronic properties of the pristine and single TM atoms X (X = Fe, Ru or Os) doped monolayer WS2 systems based on first-principle calculations. The results show that the W-S bond shows a stronger covalent bond, but the covalency is obviously weakened after the substitution of W atom with single X atoms, especially for Ru (4d(7)5s(1)) with the easily lost electronic configuration. The smaller total energies of the doped systems reveal that the spin-polarized states are energetically favorable than the non-spin-polarized states, and the smallest total energy of -373.918 eV shows the spin-polarized state of the Os doped monolayer WS2 system is most stable among three doped systems. In addition, although the pristine monolayer WS2 system is a nonmagnetic-semiconductor with a direct band gap of 1.813 eV, single TM atoms Fe and Ru doped monolayer WS2 systems transfer to magnetic-HM with the total moments Mtot of 1.993 and 1.962 mu(B), while single TM atom Os doped monolayer WS2 systems changes to magnetic-metal with the total moments Mfot of 1.569 MB. Moreover, the impurity states with a positive spin splitting energies of 0.543, 0.276 and 0.1999 eV near the Fermi level Er are mainly contributed by X - d(xy) and X - dx(2) y(2) states hybridized with its nearest neighbor atom W - d(z2) states for Fe, Ru and Os doped monolayer WS2 system, respectively. Finally, we hope that the present study on monolayer WS2 will provide a useful theoretical guideline for exploring low-dimensional spintronic materials in future experiments. (C) 2018 Elsevier Ltd. All rights reserved.
机译:我们基于第一性原理计算报告了原始和单个TM原子X(X = Fe,Ru或Os)掺杂的单层WS2系统的结构,磁性和电子性质。结果表明,W-S键显示出更强的共价键,但将W原子替换为单个X原子后,其共价性明显减弱,尤其是对于具有容易丢失的电子构型的Ru(4d(7)5s(1))。掺杂系统的总能量较小,表明自旋极化态在能量上比非自旋极化态有利,而最小总能量为-373.918 eV,表明Os掺杂单层WS2系统的自旋极化态为在三个掺杂系统中最稳定。此外,尽管原始的单层WS2系统是具有1.813 eV的直接带隙的非磁性半导体,但是单个TM原子的Fe和Ru掺杂的单层WS2系统以总磁矩Mtot为1.993和1.962 mu(B)转移到磁性HM。 ),而单个TM原子Os掺杂的单层WS2系统变为磁金属,总力矩Mfot为1.569 MB。此外,在费米能级Er附近具有0.543、0.276和0.1999 eV正自旋分裂能的杂质态主要由与其最近邻杂交的X-d(xy)和X-dx(2)y(2)态贡献。 Fe,Ru和Os掺杂的单层WS2系统的原子W-d(z2)状态。最后,我们希望当前关于单层WS2的研究将为探索未来实验中的低维自旋电子材料提供有用的理论指导。 (C)2018 Elsevier Ltd.保留所有权利。

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