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First-principles study of the heavy metal atoms X (X=Au, Hg, Tl or Pb) doped monolayer WS_2

机译:重金属原子X(X = Au,Hg,Tl或Pb)掺杂的单层WS_2的第一性原理研究

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摘要

The heavy metal atoms X (X = Au, Hg, Tl or Pb) doped monolayer WS_2 systems have been studied by using the spin-polarized first-principles calculations. Although pure monolayer WS2 system is a nonmagnetic semiconductor with a direct band gap of 1.820 eV, the Au and Hg atoms doped monolayer WS2 systems change to half-metal (HM) ferromagnets with the total magnetic moments 0.697 and 1.776 μ_B as well as the smaller spin-down gaps 0.605 and 0.527 eV, respectively, while the Tl and Pb atoms doped monolayer WS_2 systems change to magnetic metal with the total magnetic moment 0.584 μ_B and a nonmagnetic metal. From the minimization of the formation energy, we find that it is easy to incorporate these heavy metal atoms into monolayer WS_2 system under S-rich condition, especially for the Au doped monolayer WS_2 system not only easily to be formed but also a HM ferromagnet, and thus the best candidate used in the spintronic devices.
机译:通过使用自旋极化的第一性原理计算研究了重金属原子X(X = Au,Hg,Tl或Pb)掺杂的单层WS_2系统。尽管纯单层WS2系统是具有1.820 eV的直接带隙的非磁性半导体,但是掺有Au和Hg原子的单层WS2系统变为半金属(HM)铁磁体,总磁矩为0.697和1.776μ_B,并且较小自旋下降间隙分别为0.605和0.527 eV,而Tl和Pb原子掺杂的单层WS_2系统变为具有总磁矩为0.584μB的磁性金属和非磁性金属。从形成能的最小化中,我们发现很容易在富S条件下将这些重金属原子掺入单层WS_2系统中,尤其是对于Au掺杂的单层WS_2系统而言,不仅容易形成而且还具有HM铁磁体,因此是自旋电子设备中使用的最佳候选者。

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