The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells

摘要

AbstractPhotoluminescence (PL) properties of four blue-violet light emitting InGaN/GaN multiple quantum well (MQW) structures with varying well thickness were studied by means of room temperature PL (RTPL) spectra and temperature-dependent PL (TDPL). From the TDPL, two different kinds of dependencies of PL peak energy with increasing temperature are observed, i.e. an S-shape dependence and an inverted V-shape one. Since the In content in MQW structures is nearly identical for four samples, the difference in luminescence properties is mainly attributed to an increase in localization effects with increasing well thickness.Highlights•The PL dominant peaks of samples A and B undergo an S-shape shift with increasing temperature.•While for the samples C and D display an inverted V-shape shift with increasing temperature.•The Samples A and B display a declining-then-rising trend of the full width at half maximum (FWHM).•The FWHM of the samples C and D display a trend of continuous increase.•The differences mentioned above is attributed to an increase in localization effects with increasing well thickness.