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Enhanced thermoelectric properties of bismuth intercalated compounds Bi_xTiS_2

机译:铋插层化合物Bi_xTiS_2的增强的热电性能

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The thermoelectric properties of Bi intercalated compounds Bi_xTiS_2 have been investigated at the temperatures from 5 to 310 K. The results indicate that Bi intercalation into TiS_2 leads to substantial decrease of its electrical resistivity (one order low for x=0.05 and two orders low for x = 0.15, 0.25 at 300 K) and lattice thermal conductivity (22, 115 and 158% low at 300 K for x=0.05, 0.15 and 0.25, respectively). Specially, the figure of merit, ZT, of lightly intercalated compound Bi_(0.05)TiS_2 has been improved at all temperatures investigated, and specifically reaches 0.03 at 300 K, which is about twice as large as that of TiS_2.
机译:研究了Bi插层化合物Bi_xTiS_2在5至310 K的温度下的热电性能。结果表明,Bi插层到TiS_2中会导致其电阻率显着降低(x = 0.05时低一阶,x = 0.05时低二阶。 = 300,K时分别为0.15、0.25和0.25)和晶格导热率(对于x = 0.05、0.15和0.25,在300 K时分别降低22、115和158%)。特别地,在所有研究的温度下,轻度嵌入的化合物Bi_(0.05)TiS_2的品质因数ZT均得到改善,并且在300 K时达到0.03,约为TiS_2的两倍。

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