Non-parabolic model for InAs/GaAs quantum dot capacitance spectroscopy

摘要

InAs/GaAs quantum dot electron spectra obtained from the capacitance-voltage measurements by B.T. Miller et al. [B.T. Miller, W. Hansen, S. Manus, R.J. Luyken, A. Lorke, J.P. Kotthaus, S. Huant, G. Medeiros-Ribeiro, P.M. Petroff, Phys. Rev. B 56 (1997) 6764] are quantitatively interpreted by applying a three-dimensional model of a semiconductor quantum dot with energy-dependent electron effective mass and finite confinement potential. The Coulomb interaction between tunnelled electrons is taken into account by perturbation theory. The observed significant increase in the electron effective mass of the quantum dot in respect to its bulk value is explained by the non-parabolic effect. (c) 2006 Elsevier Ltd. All rights reserved.