Novel high speed circuit structures for BiCMOS environment

摘要

Novel high speed BiCMOS circuits including ECL/CMOS, CMOS/ECL interface circuits and a BiCMOS sense amplifier are presented. A generic 0.8 /spl mu/m complementary BiCMOS technology has been used in the circuit design. Circuit simulations show superior performance of the novel circuits over conventional designs. The time delays of the proposed ECL/CMOS interface circuits, the dynamic reference voltage CMOS/ECL interface circuit and the BiCMOS sense amplifier are improved by 20, 250, and 60%, respectively. All the proposed circuits maintain speed advantage until the supply voltage is scaled down to 3.3 V.