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Investigation on low-voltage low-power silicon bipolar design topology for high-speed digital circuits

机译:高速数字电路的低压低功率硅双极设计拓扑研究

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This paper investigates a bipolar design topology which is suitable to operate from a voltage supply well below 1.5 V, while maintaining the ability of high frequency operation. The topology has been applied in the design of different divide-by-4 circuits, utilizing a 20-GHz 0.6-/spl mu/m Si bipolar technology. The different versions featured slight modifications in the architecture of the logic cells and the influence on the frequency and supply voltage range of operation has been investigated. Measurements have shown operation from 1.0-V supply voltage and up to 4.2-GHz input frequency to 1.5 V and up to 6 GHz. The power consumption is approximately 0.3 mW/latch and 1.2 mW/latch, respectively.
机译:本文研究了一种双极性设计拓扑结构,该拓扑结构适合在低于1.5 V的电源电压下工作,同时保持了高频工作能力。该拓扑已利用20 GHz 0.6- / spl mu / m Si双极技术应用于不同的4分频电路的设计中。不同版本对逻辑单元的体系结构进行了细微修改,并研究了对频率和电源电压范围的影响。测量表明,在1.0V电源电压和高达4.2GHz输入频率,至1.5V和高达6GHz的频率下均可工作。功耗分别约为0.3 mW /闩和1.2 mW /闩。

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