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Design techniques for low-voltage high-speed digital bipolar circuits

机译:低压高速数字双极性电路的设计技术

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This paper describes design techniques for multigigahertz digital bipolar circuits with supply voltages as low as 1.5 V. Examples include a 2/1 multiplexer operating at 1 Gb/s with 1.2 mW power dissipation, a D-latch achieving a maximum speed of 2.2 GHz while dissipating 1.4 mW, two exclusive-OR gates with a delay less than 200 ps and power dissipation of 1.3 mW, and a buffer/level shifter having a delay of 165 ps while dissipating 1.4 mW. The prototypes have been fabricated in a 1.5-/spl mu/m 12-GHz bipolar technology. Simulations on benchmarks such as frequency dividers and line drivers indicate that, for a 1.5-V supply, the proposed circuits achieve higher speed than their CMOS counterparts designed in a 0.5-/spl mu/m CMOS process with zero threshold voltage.
机译:本文介绍了供电电压低至1.5 V的千兆赫兹数字双极电路的设计技术。示例包括以1 Gb / s的速度运行,功耗为1.2 mW的2/1多路复用器,D锁存器的最高速度为2.2 GHz,功耗为1.4 mW,两个异或门的延迟小于200 ps,功耗为1.3 mW,缓冲/电平移位器的延迟为165 ps,而功耗为1.4 mW。原型采用1.5- / splμm/ m 12-GHz双极技术制造。在诸如分频器和线路驱动器之类的基准测试上的仿真表明,对于1.5V电源,所提出的电路比采用0.5- / spl mu / m CMOS工艺(零阈值电压)设计的CMOS电路具有更高的速度。

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