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Design and optimization of low-voltage low-power quasi-floating gate digital circuits

机译:低压低功耗准浮栅数字电路的设计与优化

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This paper explores the design and optimization of quasi-floating gate MOS techniques to low-voltage/low-power digital circuitry. The simulated power consumption of standard CMOS gates is compared to that of QFGMOS implementations in a 0.18/spl mu/m process for different supply voltages and device sizes. A 0.4V V/sub DD/ full-adder biased for propagation delay similar to that of 0.8V CMOS is simulated and shown to consume 1.2/spl mu/W for a 50MHz input, representing more than a 50% power reduction over the CMOS equivalent. A divide-by-16 circuit designed for operation at a maximum frequency of 400MHz uses 25/spl mu/W, 45/spl mu/W, and 75/spl mu/W for supplies of 0.4V, 0.6V and 0.8V.
机译:本文探讨了针对低电压/低功耗数字电路的准浮栅MOS技术的设计和优化。在不同电源电压和器件尺寸的情况下,以0.18 / spl mu / m的工艺将标准CMOS栅极的仿真功耗与QFGMOS实现的功耗进行了比较。对传播延迟偏置的0.4VV / sub DD /全加法器进行了仿真,类似于0.8V CMOS,并显示在50MHz输入下功耗为1.2 / spl mu / W,与CMOS等效器件相比,功耗降低了50%以上。设计用于最大频率为400MHz的16分频电路使用25 / spl mu / W,45 / spl mu / W和75 / spl mu / W来提供0.4V,0.6V和0.8V的电源。

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