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Implementation of a Fourth-Generation 1.8-GHz Dual-Core SPARC V9 Microprocessor

机译:第四代1.8 GHz双核SPARC V9微处理器的实现

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This fourth-generation processor combines two enhanced third-generation cores using an advanced 90-nm dual-Vt, dual-gate-oxide technology. Hardware additions feature expanded caches and inclusion of a 2-MB Level-2 cache and a Level-3 tag. Layout was completely redrawn to optimize the design for manufacturability and performance in the latest technology. Special emphasis was placed on library development to improve automation and assist in custom design. The memory design methodologies were completely updated to make quality design simpler and more robust. The chip operates at 1.8 GHz while dissipating 90 W of power at 1.1 V.
机译:该第四代处理器使用先进的90纳米双Vt,双栅极氧化物技术结合了两个增强的第三代内核。硬件的新增功能扩展了缓存,并包含2 MB的Level-2缓存和Level-3标签。布局已完全重新绘制,以利用最新技术优化设计的可制造性和性能。特别强调了图书馆的发展,以提高自动化程度并协助定制设计。存储器设计方法已完全更新,以使质量设计更简单,更可靠。该芯片以1.8 GHz的频率运行,同时在1.1 V的功耗为90W。

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