机译:硼掺杂纳米晶硅/非晶硅混合发射极层,用于改善硅异质结太阳能电池的性能
Institute of Photo-Electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University),Tianjin 300071, China;
Institute of Photo-Electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University),Tianjin 300071, China;
Institute of Photo-Electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University),Tianjin 300071, China,Institute of Information Functional Materials, Hebei University of Technology, Tianjin 300130, China;
Institute of Photo-Electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University),Tianjin 300071, China;
Institute of Photo-Electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University),Tianjin 300071, China;
Institute of Photo-Electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University),Tianjin 300071, China;
Institute of Photo-Electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University),Tianjin 300071, China;
Institute of Photo-Electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University),Tianjin 300071, China;
Nanocrystalline silicon; Heterojunction solar cells; Optical properties; Minority carrier lifetime;
机译:硼掺杂非晶碳化硅/纳米晶硅混合窗口层提高太阳能电池性能
机译:薄膜晶体硅太阳能电池中掺硼的p型氢化非晶硅和晶体硅之间异质结处的后场效应
机译:通过在硅异质结太阳能电池中沉积微晶硅发射极层,增强了非晶/晶体硅界面处的钝化并抑制了肖特基势垒
机译:逐层制备硼掺杂氢化纳米晶硅薄膜及其在n-i-p柔性非晶硅薄膜太阳能电池中的应用
机译:二氧化硅纳米球纹理背反射器,用于增强非晶硅和纳米晶硅太阳能电池中的光捕获
机译:SiNx阻挡层对聚酰亚胺Ga2O3掺杂的ZnO p-i-n氢化非晶硅薄膜太阳能电池性能的影响
机译:晶体非晶硅异质结太阳能电池中p掺杂μc-Si:H发射极层的优化
机译:富含缺陷外延对晶体硅/非晶硅异质结太阳能电池的影响及低迁移率层用于提高性能。