Solar cell manufacture for electronic device, involves annealing n-doped polycrystalline silicon layer formed on p-doped polycrystalline layer to convert its amorphous silicon into polycrystalline silicon

摘要

A conductive layer (120) is formed on substrate (110). A p+ doped polycrystalline silicon layer (135) formed on layer (120), is annealed to convert amorphous silicon of layer (135) into polycrystalline silicon. A n- doped polycrystalline silicon layer (145) formed on layer (135) is annealed to convert its amorphous silicon into polycrystalline silicon. A conductive layer (150) is formed on layer (145). The silicon layer (135) is annealed by applying thermal energy with laser while maintaining the substrate at temperature of less than 450 deg C. An Independent claim is also included for solar cell structure.