首页> 外国专利> METHOD FOR PRODUCING NANOCRYSTALLINE SILICON/AMORPHOUS HYDROGENATED SILICON HETEROJUNCTION FOR SOLAR ELEMENTS AND SOLAR ELEMENT WITH SUCH HETEROJUNCTION

METHOD FOR PRODUCING NANOCRYSTALLINE SILICON/AMORPHOUS HYDROGENATED SILICON HETEROJUNCTION FOR SOLAR ELEMENTS AND SOLAR ELEMENT WITH SUCH HETEROJUNCTION

机译:制备纳米晶硅/非晶加氢硅异质结的太阳能电池及具有这种异质结的太阳能电池的方法

摘要

FIELD: electronic equipment; optics.SUBSTANCE: invention relates to the field of optoelectronic technology and can be used to create cheap and effective solar cells based on layers of amorphous hydrogenated silicon. Method for producing a nanocrystalline silicon/amorphous hydrogenated silicon heterojunction in a sample consisting of a film of amorphous hydrogenated silicon, deposited on a quartz substrate, involves irradiating the sample with femtosecond laser pulses in a vacuum at a pressure of not more than 2⋅10–2 mbar, with a central emission wavelength of 257–680 nm, a pulse repetition rate of 20–500 kHz, a pulse duration of 30–500 fs, and an energy density of laser pulses of 4–500 mJ/cm. To obtain a solar cell, the nanocrystalline silicon/amorphous hydrogenated silicon heterojunction obtained by the method described above is made on a quartz substrate with a transparent conductive sublayer, and a metal electrode (aluminum, gold or magnesium) is thermally deposited on top. Achieved properties of solar cells will eventually result in higher values (in comparison with solar cells based on a-Si:H) of the photovoltaic parameters (the following values can be achieved: photoconversion efficiency – 14 %, the open circuit voltage – 0.68 V, short-circuit current – 36.5 mA/cm).EFFECT: technical result achieved by using the claimed group of inventions is to provide increased stability of electrical and photoelectric properties under illumination, increased mobility of charge carriers, increased efficiency and relative cheapness in its manufacture (in comparison with solar cells made of crystalline silicon).9 cl, 3 tbl, 4 ex, 9 dwg
机译:领域:电子设备;光学器件技术领域本发明涉及光电技术领域,并且可用于基于非晶态氢化硅层来制造廉价且有效的太阳能电池。在由沉积在石英衬底上的非晶氢化硅膜组成的样品中制备纳米晶硅/非晶氢化硅异质结的方法包括在真空中以不超过2⋅10的压力对飞秒激光脉冲照射样品–2 mbar,中心发射波长为257–680 nm,脉冲重复频率为20–500 kHz,脉冲持续时间为30–500 fs,激光脉冲的能量密度为4–500 mJ / cm。为了获得太阳能电池,在具有透明导电子层的石英基板上制造通过上述方法获得的纳米晶硅/非晶氢化硅异质结,并且在其上热沉积金属电极(铝,金或镁)。太阳能电池的性能最终将导致光伏参数的值更高(与基于a-Si:H的太阳能电池相比)(可以实现以下值):光转换效率– 14%,开路电压– 0.68 V ,短路电流– 36.5 mA / cm)。效果:通过使用要求保护的一组发明而获得的技术结果是,提高了照明条件下电和光电性能的稳定性,电荷载流子的迁移率,效率以及相对便宜制造(与晶体硅制成的太阳能电池相比).9 cl,3 tbl,4 ex,9 dwg

著录项

  • 公开/公告号RU2016152065A3

    专利类型

  • 公开/公告日2018-07-02

    原文格式PDF

  • 申请/专利权人

    申请/专利号RU20160152065

  • 发明设计人

    申请日0000-00-00

  • 分类号H01L31/0376;B82B1;B82B3;

  • 国家 RU

  • 入库时间 2022-08-21 12:36:15

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