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Characterizations of Ce-doped Y_4Al_2O_9 Crystals for Scintillator Applications

机译:Ce掺杂Y_4Al_2O_9晶体在闪烁体中的表征

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Ce-doped Y4Al2O9 (YAM) crystals were grown by the floating zone method, and several different characterizations were conducted for scintillator applications. Both photoluminescence (PL) and scintillation show emissions predominantly due to the 5d-4f transitions of Ce3+ over 400-600 nm. The luminescence lifetime is approximately 10 ns for PL while the scintillation decay curve is best fitted by a second-order exponential decay function with the lifetimes of approximately 30 and 300 ns. These lifetimes are faster than that for Ce:Y3Al5O12 (YAG) (similar to 120 ns) and close to that of Ce:YAlO3 (YAP) (similar to 30 ns). The Ce-doped YAM shows a relatively high afterglow signal induced by X-rays (2 ms pulse) possibly due to the inclusion of a large number of defect centers. Pulse height spectroscopy was demonstrated under alpha-ray irradiation, and a successful sample showed a full-energy peak.
机译:通过浮区法生长掺Ce的Y4Al2O9(YAM)晶体,并针对闪烁体应用进行了几种不同的表征。光致发光(PL)和闪烁均显示发射,主要是由于Ce3 +在400-600 nm范围内的5d-4f跃迁。 PL的发光寿命约为10 ns,而闪烁衰减曲线最好由二阶指数衰减函数拟合,其寿命约为30和300 ns。这些寿命比Ce:Y3Al5O12(YAG)(约120 ns)快,并且接近Ce:YAlO3(YAP)(约30 ns)。掺Ce的YAM可能由于X射线(2 ms脉冲)而产生相对较高的余辉信号,这可能是由于包含大量缺陷中心所致。在α射线照射下证明了脉冲高度光谱,并且成功的样品显示出全能量峰。

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