CMOS Monolithic Metal–Oxide Gas Sensor Microsystems

摘要

This paper presents two mixed-signal monolithic gas sensor microsystems fabricated in standard 0.8-$muhbox m$CMOS technology combined with post-CMOS micromachining to form the microhotplates. The on-chip microhotplates provide very high temperatures (between 200$^circ$C and 400$^circ$C), which are necessary for the normal operation of metal–oxide sensing layers. The first microsystem has a single-ended architecture comprising a microhotplate (diameter of 300$muhbox m$) and a digital proportional-integral-derivative (PID) microhotplate temperature controller. The second microsystem has a fully-differential architecture comprising an array of three microhotplates (diameter of 100$muhbox m$) and three digital PID microhotplate temperature controllers (one controller per microhotplate). The on-chip digital PID temperature controllers can accurately adjust the microhotplate temperatures up to 400$^circ$C with a resolution of 2$^circ$C. Further, both microsystems feature on-chip logarithmic converters for the readout of the metal–oxide resistors (which cover a measurement range between 1$hbox kOmega$and 10$hbox MOmega$), 10-bit A/D converters, anti-aliasing filters, 10-bit D/A converters,$I ^2 C$serial interfaces, and bulk-chip temperature sensors. Carbon monoxide (CO) concentrations in the sub-parts-per-million (ppm) range are detectable, and a resolution of 0.2 ppm CO has been achieved.