A - Solar-Blind Photodetector Prepared by Furnace Oxidization of GaN Thin Film

摘要

The authors report the growth of $beta$-$hbox{Ga}_{2} hbox{O} _{3}$ thin film by simple furnace oxidation of GaN thin film and the fabrication of a solar-blind $beta$-$hbox{Ga}_{2} hbox{O} _{3}$ photodetector (PD). For the PD with an active area of 4.4 ${hbox {mm}}^{2}$ and 5-V applied bias, it was found that measured current was only 1.39$,times 10 ^{-10}~hbox{A}$ in the dark and increased to 2.03 $,times 10 ^{-5}~hbox{A}$ when illuminated with 260-nm ultraviolet (UV) light (41.27 $muhbox{W}/{hbox {cm}}^{2}$). It was also found that the fabricated PD exhibits an extremely large deep-UV-to-visible rejection ratio.