Production method of GaN thin film templet baseplate, GaN thin film templet baseplate, and GaN thick film monocrystal

摘要

Although film thickness of the GaN monocrystal accurately production method of the control possible GaN monocrystal, it grows the GaN thick film whose quality is good even with when hydro ride vapor phase growth method is utilized the GaN thin film templet baseplate, and the GaN monocrystal growth device which are suited are offered. Ga which it heats melts at specified temperature (gallium) HCl (hydrogen chloride) blowing GaCl which is formed (chloridation gallium) with, NH which is the hydride gas₃ (ammonia) the gas and, reacting on the baseplate, the aforementioned NH₃ gas through the nozzle, in the production method of the GaN monocrystal due to the hydro ride vapor phase growth method which forms the GaN thin film, for example the baseplate vicinity (, just 0.7 - 4.0 times that diameter of the baseplate tried to supply the position where it is far) from the baseplate. In addition, NGO whose GaN and grating constant are close as a baseplate, (011) it tried to use the baseplate.