Provided are a manufacturing method of a GaN single crystal in which the film thickness of the GaN single crystal can be controlled accurately, even when a hydride vapor phase epitaxy is applied; a GaN thin film template substrate which is suitable for growing a GaN thick film with a fine property; and a GaN single crystal growing apparatus. Provided is a manufacturing method of a GaN single crystal by a hydride vapor phase epitaxy, wherein the hydride vapor phase epitaxy comprises: spraying HCl (hydrogen chloride) onto Ga (gallium) which is heated and fused in a predetermined temperature to generate GaCl (gallium chloride); and forming a GaN thin film by a reaction of the generated GaCl (gallium chloride) with NH3 (ammonia) gas which is hydroxide gas on a substrate, the manufacturing method comprising supplying the NH3 gas in a vicinity of the substrate (for example, at a position which is separated from the substrate by a distance of 0.7-4.0 times as longer than a diameter of the substrate) through a nozzle. Further, as the substrate, an NGO(011) substrate in which the lattice constant thereof is similar to that of GaN is used.
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