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Low temperature humidity sensor based on Ge nanowires selectively grown on suspended microhotplates

机译:基于在悬浮微热板上选择性生长的Ge纳米线的低温湿度传感器

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摘要

The gas sensing properties of germanium (Ge) monocrystalline nanowires (NWs) at temperatures up to 100 ℃ have been demonstrated for the first time. The devices have been fabricated based on an energy efficient and site-specific vapor-liquid-solid growth of NW meshes on top of microhotplates, which contain a buried heater and top electrodes. The devices have been investigated for the detection of oxygen, nitrogen dioxide and carbon monoxide gases, showing the important effect played by pre-adsorbed surface oxygen in the response to the different gases. The Ge NW-based devices exhibit p-type conductivity and show high selectivity in their response towards water vapor. Water vapor interaction is not dependent on the presence of oxygen and the adsorption leads to electron donation in the Ge nanowires. ТЕМ analysis of the NWs proves that they are covered by a thin, outer germanium oxide layer, which is stable and does not grow upon exposure to these gases and operation temperatures up to 100 ℃. The presence of this oxide layer plays a key role in the sensing mechanisms.
机译:锗(Ge)单晶纳米线(NWs)在高达100℃的温度下的气敏特性已首次得到证明。该设备是基于微热板顶部的NW筛网的节能和特定位置的汽-液-固生长而制造的,该微板具有埋入式加热器和顶部电极。已对用于检测氧气,二氧化氮和一氧化碳气体的设备进行了研究,显示了预吸附的表面氧气在响应不同气体时所起的重要作用。基于Ge NW的器件具有p型导电性,并且对水蒸气的响应具有很高的选择性。水蒸气的相互作用不取决于氧的存在,吸附会导致Ge纳米线中的电子给体。西北地区的ТЕМ分析表明,它们被一层薄薄的氧化锗外层覆盖,该层很稳定,并且在暴露于这些气体和高达100℃的工作温度下不会生长。该氧化物层的存在在传感机制中起关键作用。

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  • 来源
    《Sensors and Actuators 》 |2017年第5期| 669-677| 共9页
  • 作者单位

    MIND-Departament d'Enginyeries and Institut de Nanociència і Nanotecnologia (IN2UB), Universitat de Barcelona (UB), 08028, Barcelona, Spain;

    Institute of Materials Chemistry, Vienna University of Technology (TUW), 1060, Vienna, Austria;

    MIND-Departament d'Enginyeries and Institut de Nanociència і Nanotecnologia (IN2UB), Universitat de Barcelona (UB), 08028, Barcelona, Spain;

    Centre Nacional de Microelectrònica-Institut de Microelectrònica de Barcelona, Consejo Superior de Investigaciones Científicas (CSIC), 08193, Bellaterra, Spain;

    Centre Nacional de Microelectrònica-Institut de Microelectrònica de Barcelona, Consejo Superior de Investigaciones Científicas (CSIC), 08193, Bellaterra, Spain;

    MIND-Departament d'Enginyeries and Institut de Nanociència і Nanotecnologia (IN2UB), Universitat de Barcelona (UB), 08028, Barcelona, Spain;

    Centre Nacional de Microelectrònica-Institut de Microelectrònica de Barcelona, Consejo Superior de Investigaciones Científicas (CSIC), 08193, Bellaterra, Spain;

    Institute of Materials Chemistry, Vienna University of Technology (TUW), 1060, Vienna, Austria;

    MIND-Departament d'Enginyeries and Institut de Nanociència і Nanotecnologia (IN2UB), Universitat de Barcelona (UB), 08028, Barcelona, Spain;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Germanium nanowires; Localized growth; Device integration; Water vapor gas sensor;

    机译:锗纳米线;局部增长;设备集成;水蒸气传感器;

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