Sensitivity analysis of silicon nanowire chemical sensor based on its geometry and the operating temperature.

摘要

Silicon Nano Wires (SiNW) have been used in recent times as major building block in various nano devices like sensors, FETs etc. SiNW devices have also manifested many advantages over nano tube (NT) devices such as their fabrication in today's silicon world. Chemical sensor based on SiNW changes its conductivity when the target molecules are captured by the receptors spread across the nano wire (NW). Chemical sensitivity, which is defined as the change in conductance, is analyzed analytically to see how it is affected by different parameters. The sensitivity of the sensor based on the length of the SiNW is verified from previous works and the temperature which has not been considered before as an important parameter in the sensor performance are taken into account to see how it affects the sensitivity of the sensor.