Sensitivity Analysis of Silicon Nanowire Chemical Sensor

摘要

The Si nanowire sensors with different geometries in the chemical detection are described. To analyze the sensor performance, the sensitivity of sensors with different cross sections including circular, rectangular, and trapezoidal are derived by two definitions. It is demonstrated that the sensitivity of Si nanowire sensors with different structures in the chemical detection is a function of geometrical parameters and doping density. It is illustrated that the sensitivity varies inversely with cross-section area, doping density, and also the length of nanowire which has not analytically been shown before as a significant parameter for sensor performance. Finally, it offers a general formula for the Si nanowire chemical sensors sensitivity with different structures.