Comparative study on dc characteristics of In_(0.49)Ga_(0.51)P-channel heterostructure field-effect transistors with different gate metals

摘要

DC characteristics of interesting In_(0.49)Ga_(0.51)P-channel heterostructure field-effect transistors (HFETs) with different gate metals, e.g., Pt, Pd and Au, have been studied and demonstrated. A very thin and fresh oxide layer is introduced to increase the gate turn-on and breakdown voltages and reduce the gate leakage current. It is found that, metal-oxide-semiconductor field-effect transistors show higher barrier height, turn-on voltage, breakdown voltage, off-state voltage, output current and transconductance than metal-semiconductor field-effect transistors. In addition, the barrier height and turn-on voltage are increased with the increasing metal work function. However, the breakdown voltage is decreased with the increasing metal work function. All studied devices show good performances of high breakdown voltage, high output drain saturation and flat and wide transconductance operation regimes. The temperature-dependent behaviours are also studied. It is known from experimental results that In_(0.49)Ga_(0.51)P HFETs show good potentiality in high-temperature electronics applications.