Si-Sb-Te films for phase-change random access memory

摘要

Electrical properties and crystallization behaviour of Si-Sb-Te films were studied and compared with those of a Ge_2Sb_2Te_5 film. The resistivity ratio of Si-Sb-Te films can reach 10~6 during the amorphous-crystalline transition, accompanied with a small thickness change (less than 3%). The melting temperature of Si-Sb-Te films is lower than that of a Ge_2Sb_2Te_5 film. Furthermore, the switching characteristics of the device using a Si_(10.7)Sb_(39.5)Te_(49.8) film were also studied. The device can be successfully switched with a 4 V, 100 ns pulse for SET operation and a 5 V, 40 ns pulse for RESET operation. A small RESET current and low power consumption can be obtained, which may be attributed to the low melting temperature and the high crystalline resistivity of Si-Sb-Te films. These results indicate the feasibility of Si-Sb-Te films in the application of phase-change random access memory.