Phase-Change Memory Device Using Si-Sb-Te Film for Low Power Operation and Multibit Storage

摘要

The switching characteristics of the electrical phase-change memory device using a SiSbTe film were studied. The SiSbTe film has a wider variation of electrical resistivity (up to 107 times) along with crystallization than that of the conventionally used Ge2Sb2Te5 film, and the SiSbTe film crystallizes predominantly into the hexagonal phase in a manner similar to the Sb2Te3 phase. The threshold voltage of the device is 5.87 V. The device was successfully operated with a 100 ns–5.5 V pulse for setting and a 20 ns–3 V pulse for resetting. The RESET current is about 1.37 mA, and the programming energies for resetting and setting are about 110 pJ and 60 pJ, respectively. More than 100 cycles were achieved with a RESET/SET resistance ratio higher than 50. In addition, multiple stable resistance stages can be obtained by adjusting the SET pulse, which makes multibit storage per cell possible.