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Phase-change memory cells having a high read margin at a low power operation
Phase-change memory cells having a high read margin at a low power operation
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机译:在低功耗操作下具有高读取余量的相变存储单元
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摘要
A memory cell device includes a first electrode, phase-change material adjacent the first electrode, a second electrode adjacent the phase-change material, a diffusion barrier adjacent the phase-change material, and isolation material adjacent the diffusion barrier for thermally isolating the phase-change material. The diffusion barrier prevents diffusion of the phase-change material into the isolation material.
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