Sb-Se-Based Phase-Change Memory Device With Lower Power and Higher Speed Operations

摘要

A phase-change material of Sb{sub}65Se{sub}35 was newly proposed for the nonvolatile memory applications. The fabricated phase-change memory device using Sb{sub}65Se{sub}35 showed a good electrical threshold switching characteristic in the dc current-voltage (I-V) measurement. The programming time for set operation of the memory device decreased from 1 μs to 250 ns when SbesSess was introduced in place of the conventionally employed Ge{sub}2Sb{sub}2Te{sub}5 (GST). The reset current of Sb{sub}65Se{sub}35 device also dramatically reduced from 15 mA to 1.6 mA, compared with that of GST device. These results are attributed to the low melting temperature and high crystallization speed of Sb{sub}65Se{sub}35 and will contribute to lower power and higher speed operations of a phase-change nonvolatile memory.