X-ray diffuse scattering from stacking faults in Czochralski silicon

摘要

The results of a study of stacking faults and dislocation loops in samples from Czochralski grown silicon crystal are reported. High resolution x-ray diffraction has been used to measure the reciprocal space maps of intensity distribution from the scattering on defects in silicon wafers after annealing processes. The displacement field around stacking faults and dislocation loops has been calculated using the Burgers theory of elasticity. From these calculations a reciprocal space map of x-ray diffuse scattered intensity has been simulated. The type and size of the defects can be determined from a comparison of measured with simulated maps. The type of defects has been determined from the symmetry of measured reciprocal space maps, where higher intensity streaks corresponding to planar defects in {111} planes have been observed. Using the width of these higher intensity streaks and comparing measured and simulated maps, the radius of stacking faults with the Burgers vector a/3[111] in {111} planes was found to be 0.3-0.5 μm.