X-ray diffuse scattering from stacking faults in thick 3C-SiC single crystals

摘要

Stacking faults in thick (001)- and (111)-oriented 3C-SiC single crystals are studied by high resolution x-ray diffraction. The authors demonstrate that the analysis of the diffuse scattering intensity distribution can be used as a nondestructive means to accurately determine the densities of Shockley-type stacking faults. The diffuse scattering intensity is simulated with a scattering model based on a difference-equation description of faulting in fcc materials. It is shown that the (001) SiC crystals exhibit an anisotropic fault distribution, whereas the (111) SiC crystals exhibit an isotropic fault distribution, in excellent quantitative agreement with transmission electron microscopy observations.