Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scattering

摘要

Thick 3C-SiC single crystals grown by continuous-feed physical vapor transport (CF-PVT) are studied by high-resolution X-ray reciprocal space mapping. These crystals contain Shockley-type stacking faults (SFs) lying in the {111} planes, which give rise to diffuse intensity streaks along the (111) directions. An approach is presented that allows to determine, in combination with the simulation of transverse scans, the SF density from the simulation of the diffuse intensity streaks. SF densities as low as 0.4 × 10~3 cm~(-1) could be detected in high-quality CF-PVT grown crystals.