Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes

摘要

A SiCl_4/SF_6 dry etch plasma recipe is presented giving a selectivity of 14:1 between GaN and AlGaN. Using a leakage test structure, which enables bulk and surface leakage components to be identified independently, the optimized recipe is compared to an un-etched sample and devices recessed using a Cl_2/Ar/O_2-based plasma chemistry. Devices etched using the SiCl_4/SF_6 recipe demonstrated reduced bulk and surface leakage currents when operated over a wide range of temperatures. Consequently the SiCl_4/SF_6 recipe is identified as most suitable for the fabrication of gate recessed AlGaN/GaN HEMTs.