机译:窄带隙Sige通道超晶格带隙将其设计为Dram电池,以实现低电压操作和延长的空穴保留时间
School of Electrical Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu,Seoul 136-702, Korea;
School of Electrical Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu,Seoul 136-702, Korea;
School of Electrical Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu,Seoul 136-702, Korea;
School of Electrical Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu,Seoul 136-702, Korea;
School of Electrical Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu,Seoul 136-702, Korea;
School of Electrical Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu,Seoul 136-702, Korea;
School of Electrical Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu,Seoul 136-702, Korea;
机译:使用具有30nm沟道长度的超晶格带隙工程(SBE)结构的新型无电容器DRAM单元
机译:垂直门Si / SiGe基于双HBT的无电容器1T DRAM单元,可在低锁存电压下延长保留时间
机译:带隙工程设计的硅锗双稳态电阻器,用于低压运行
机译:窄带隙a-SiGe太阳能电池的缓冲层
机译:窄带隙半导体中载流子动力学和光学非线性的时间分辨测量。
机译:宽带隙聚合物(PBDB-T)和窄带隙聚合物(PBDTTT-EFT)作为Per二酰亚胺基聚合物太阳能电池供体的比较研究
机译:在重掺杂的n型硅中同时测量孔的寿命,孔的移动性和带隙的缩小