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Conduction electrons in acceptor-doped GaAs/GaAlAs heterostructures: a review

机译:掺杂受体的GaAs / GaAlAs异质结构中的传导电子:综述

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We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional (2D) electron gas (2DEG) in GaAs quantum wells (QWS), and additionally doped with smaller amounts of acceptors (mostly Be atoms) in the vicinity of 2DEG. One may also deal with residual acceptors (mostly C atoms). The behavior of such systems in the presence of a magnetic field differs appreciably from those doped in the vicinity of 2DEG with donors. Three subjects related to the acceptor-doped heterostructures are considered. First is the problem of bound states of conduction electrons confined to the vicinity of negatively charged acceptors by the joint effect of a QW and an external magnetic field parallel to the growth direction. A variational theory of such states is presented, demonstrating that an electron turning around a repulsive center has discrete energies above the corresponding Landau levels. Experimental evidence for the discrete electron energies comes from the work on interband photo-magneto-luminescence, intraband cyclotron resonance and quantum magneto-transport (the Quantum Hall and Shubnikov-de Haas effects). An electron rain-down effect at weak electric fields and a boil-off effect at strong electric fields are introduced. It is demonstrated, both theoretically and experimentally, that a negatively charged acceptor can localize more than one electron. The second subject describes experiment and theory of asymmetric quantized Hall and Shubnikov-de Haas plateaus in acceptor-doped GaAs/GaAlAs heterostructures. It is shown that the main features of the plateau asymmetry can be attributed to asymmetric density of Landau states in the presence of acceptors. However, at high magnetic fields, the rain-down effect is also at work. The third subject deals with the so-called disorder modes (DMs) in the cyclotron resonance of conduction electrons. The DMs originate from random distributions of negatively charged acceptor ions whose potentials provide effective QWs trapping the conduction electrons. This results in an upward energy shift of the DM as compared to the cyclotron resonance. Theory and experimental characteristics of DMs are discussed. A similarity between acceptor-doped heterostructures and 2D systems with antidots is briefly described. In conclusion, we mention weaker points in the research on acceptor-doped heterostructures and indicate possible subjects for further investigation. An effort has been made to quote all important works on the subject.
机译:我们回顾了在GaAs / GaAlAs异质结构中掺入施主的GaAlAs势垒中的磁光和磁传输效应,在GaAs量子阱(QWS)中提供了二维(2D)电子气(2DEG),并且还掺杂了少量的受体(主要是原子)在2DEG附近。一个也可以处理残余的受体(主要是C原子)。这种系统在磁场存在下的行为与在2DEG附近用施主掺杂的那些明显不同。考虑了与受体掺杂的异质结构有关的三个主题。首先是通过QW和平行于生长方向的外部磁场的共同作用,将导电电子的束缚态限制在带负电的受体附近。提出了这种状态的变分理论,证明围绕排斥中心转动的电子在相应的朗道能级之上具有离散能量。离散电子能量的实验证据来自于带间光磁致发光,带内回旋共振和量子磁传输(量子霍尔和Shubnikov-de Haas效应)的研究。引入了弱电场下的电子降落效应和强电场下的蒸发效应。从理论上和实验上都证明,带负电荷的受体可以定位一个以上的电子。第二个主题描述了受主掺杂的GaAs / GaAlAs异质结构中非对称量子化Hall和Shubnikov-de Haas高原的实验和理论。结果表明,平台不对称的主要特征可以归因于在存在受体的情况下朗道状态的不对称密度。但是,在强磁场下,降雨效果也起作用。第三个主题涉及传导电子的回旋共振中的所谓无序模式(DMs)。 DMs来自带负电的受主离子的随机分布,其势能提供捕获传导电子的有效QW。与回旋加速器共振相比,这导致DM的能量向上移动。讨论了DM的理论和实验特点。简要介绍了受主掺杂异质结构和带有解毒剂的2D系统之间的相似性。总之,我们在受体掺杂异质结构的研究中提到了较弱的地方,并指出了可能需要进一步研究的主题。已尽力引用有关该主题的所有重要著作。

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