机译:GaAs / GaAlAs量子阱中带电磁受体A〜(2-)定位的导电电子
Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;
Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;
LNCMI, UPR 3228, CNRS-INSA-UJF-UPS, BP166, 38042 Grenoble, Cedex 9, France;
L2C UMR 5221, CNRS-Universite Montpellier 2, Place E. Bataillon, 34090 Montpellier cedex 05, France;
L2C UMR 5221, CNRS-Universite Montpellier 2, Place E. Bataillon, 34090 Montpellier cedex 05, France;
Institute of Physics, Polish Academy of Sciences, 02668 Warsaw, Poland;
impurity and defect levels; energy states of adsorbed species; magnetoresistance;
机译:GaAs / GaAlAs异质结构中的磁受体导致量子霍尔效应中电子的磁解冻和蒸发
机译:蒙特卡洛研究GaAlAs / GaAs / GaAlAs量子阱中电子速度的变化
机译:掺杂受体的GaAs / GaAlAs异质结构中的传导电子:综述
机译:GaAs / GaAlAs量子阱中与磁受体和磁供体结合的导电电子
机译:掺Si的GaAs / AlGaAs多量子阱中电子与电子相互作用的远红外研究。
机译:GaAs / GaAlAs量子阱中氢供体杂质的线性Rashba模型
机译:由带电磁控受体定位的传导电子a $ ^ {2 - } $ in Gaas / Gaalas量子阱
机译:Gaalas / Gaas量子阱中杂质束缚态的电子态密度