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EUV Resists Designed for Low Acid Diffusion

机译:EUV抗蚀剂专为低酸扩散而设计

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Results show that covalent attachment of a PAG on a lithographic polymer has advantages for LWR and resolution for an EUV resist material. The polymer-bound PAG approach improves overall PAG homogeneity in the resist film and reduces the potential acid diffusion length. Other important advantages of the polymer-bound PAG approach: Improved exposurernlatitude and high intrinsic PAG solubility can be built into the lithographic polymer. We expect that through judicious use of PAG monomer precursors, many types of lithographic polymers can be designed and optimized for EUV and potentially 193 nm resist use.
机译:结果表明,PAG在光刻聚合物上的共价连接对于LWR和EUV抗蚀剂材料的分辨率具有优势。聚合物键合的PAG方法可改善抗蚀剂膜中的整体PAG均匀性,并减少潜在的酸扩散长度。聚合物键合PAG方法的其他重要优点:可以在光刻聚合物中内置改进的曝光度和高的PAG固有溶解度。我们期望通过明智地使用PAG单体前体,可以设计和优化许多类型的光刻聚合物,以用于EUV和潜在的193 nm抗蚀剂。

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