Design of Faster High Resolution Resists:Getting More Acid Yield from EUV Photons

摘要

This paper-discusses the development of an improved EUV Resist,XP-6627A,which easily resolves sub-30nm features at a photospeed of 12mJ/cm2.This new resist is designed for increased acid yield from greater secondary electron generation.XP-6627A has comparable resolution to XP-6627G,with a concomitant photospeed improvement of>50%.Due to the high activation nature of the resist,the best postexposure bake condition is 130°C for 90s.This material also has an ultralow diffusion coefficient as derived from CD vs PEB time studies.Finally,due to the low volatility of the resist components,the resist has low outgassing rates.