EUV COMPOSITION FOR FORMING SILICON-CONTAINING EUV RESIST LOWER LAYER FILM INCLUDING ADDITIVE

摘要

[Problem] An EUV resist underlayer film forming composition having a good resist shape is provided. [Solution] A hydrolyzable silane compound (b) having a polysiloxane (A) containing a hydrolytic condensate of a hydrolyzable silane (a) and a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. A resist underlayer film forming composition for EUV lithography comprising a. A polysiloxane (B) comprising a hydrolyzable condensate of a hydrolyzable silane (a) and a hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. A resist underlayer film forming composition for EUV lithography. Polysiloxane (A) is a cohydrolytic condensate of tetraalkoxysilane, alkyltrialkoxysilane, and aryltrialkoxysilane.