HIGH-TEMPERATURE DEVICE PERFORMANCE AND THERMAL CHARACTERISTICS OF GaAs MESFETs ON CVD DIAMOND SUBSTRATES

摘要

The temperature degradation and high-temperature characteristics of GaAs FETs on CVD diamond heat sinks were investigated by modeling the high-temperature electrical characteristics for GaAs MESFETs and by experimentally measuring the elevated-temperature degradation. The bias region for the Zero-Temperature Coefficient (ZTC) was determined. The thermal characteristics were determined by infra-red microscopy and The results were correlated with a finite element analysis calculation of GaAs FET thermal distribution.