The emphasis of the research program which utilizes the chemical beam epitaxy laboratory revolves primarily around the epitaxial growth of a wide variety of compound semiconductors (both Ⅱ-Ⅵ and Ⅲ-Ⅴ), as well as multilayered structures composed of Ⅱ-Ⅵ/Ⅱ-Ⅵ, Ⅱ-Ⅵ/Ⅲ-Ⅴ and Ⅲ-Ⅴ/Ⅲ-Ⅴ heterostruc-tures. The chemical beam epitaxy laboratory consists of two gaseous source epitaxy reactors (Ⅱ-Ⅵ-dedicated and Ⅲ-Ⅴ-dedicated) interconnected to several smaller chambers which are used for sample introduction and in-situ surface analysis and metallization. Such a multichamber epitaxy system allows the fabrication of the aforementioned heter-ostructures to be accomplished within a continuous ultrahigh vacuum environment.
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