Comparative Investigation of Surge Current Capabilities of Si IGBT and SiC MOSFET for Pulsed Power Application

摘要

The trend to move toward the solid-state and repetitive pulsed power supply requires the high-voltage, high-current, and high-speed semiconductor devices, which makes an insulated gate bipolar transistor (IGBT) preferred for this application. However, as a bipolar device, the IGBT is limited by the switching speed and switching loss. In this paper, the potential of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) for the pulsed power application is investigated. The surge current capabilities of 1.2-kV, 30-A commercial Si IGBT and SiC MOSFET are characterized and compared by the capacitor discharge experiment. In addition, the effects of various circuit parameters, including gate resistance, dc-link voltage, and dc-link capacitance, on the capacitor discharge process are investigated. It is found that the pulse current of SiC MOSFET is around two times of Si IGBT, which achieves good agreement with the datasheet. Using $di/dt$ to represent the discharging speed, the SiC MOSFET is 10 times faster than the Si IGBT. It is because the SiC MOSFET shows a lower ON-resistance in the saturation region resulted from the short-channel effect. This paper confirms the high-speed and high-current advantages of SiC MOSFET in the pulsed power application.