首页> 外文期刊>IEEE Transactions on Plasma Science >Ultraminiaturized Wideband Quasi-Chebyshev/-Elliptic Impedance-Transforming Power Divider Based on Integrated Passive Device Technology
【24h】

Ultraminiaturized Wideband Quasi-Chebyshev/-Elliptic Impedance-Transforming Power Divider Based on Integrated Passive Device Technology

机译:基于集成无源器件技术的超敏化宽带准Chebyshev / - 胶位阻抗转换功率分配器

获取原文
获取原文并翻译 | 示例

摘要

This article presents the ultraminiaturized wideband quasi-Chebyshev and -elliptic low-pass power dividers (PDs) with an impedance-transforming function using integrated passive device (IPD) technology, occupying only the sizes of 1.1 x 1.2 mm(2) and 1.1 x 1.6 mm(2), respectively. The generalized quasi-Chebyshev low-pass matching network with the detailed design procedure is utilized to construct the circuit schematic of the proposed wideband PD. In order to further improve stopband rejection, a quasi-elliptic network is introduced, resulting in an extra transmission zero (TZ). For demonstration, the quasi-Chebyshev and -elliptic PDs based on IPD technology are designed, manufactured, and measured, respectively. Measurements indicate that the quasi-elliptic PD with TZ shows good electrical responses, including lower than 1.08-dB insertion loss, all better than 15-dB return loss and isolation from 2.49 to 5.0 GHz.
机译:本文介绍了使用集成无源设备(IPD)技术的阻抗变换功能,占用的超敏感的宽带准Chebyshev和-elliptic低通功率分频器(PDS),仅占据1.1 x 1.2 mm(2)和1.1 x的尺寸分别为1.6毫米(2)。具有详细设计过程的通用拟卡比斯Hev低通匹配网络用于构建所提出的宽带PD的电路示意图。为了进一步提高阻带抑制,引入了一种准椭圆网络,从而产生额外的传输零(TZ)。为了演示,分别设计,制造和测量基于IPD技术的准Chebyshev和-elliptic PD。测量表明,具有TZ的准椭圆PD显示出良好的电响应,包括低于1.08 dB的插入损耗,均优于15-DB回波损耗,从2.49到5.0 GHz隔离。

著录项

  • 来源
    《IEEE Transactions on Plasma Science》 |2020年第4期|858-866|共9页
  • 作者单位

    Beijing Univ Posts & Telecommun Sch Elect Engn State Key Lab Informat Photon & Opt Commun Beijing 100876 Peoples R China;

    Beijing Univ Posts & Telecommun Sch Elect Engn State Key Lab Informat Photon & Opt Commun Beijing 100876 Peoples R China;

    Beijing Univ Posts & Telecommun Sch Elect Engn State Key Lab Informat Photon & Opt Commun Beijing 100876 Peoples R China;

    Beijing Univ Posts & Telecommun Sch Elect Engn State Key Lab Informat Photon & Opt Commun Beijing 100876 Peoples R China;

    Harbin Inst Technol Sch Elect & Informat Engn Harbin 150001 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Impedance-transforming; integrated passive device (IPD); power dividers (PDs); ultraminiaturized; wideband;

    机译:阻抗变换;集成无源装置(IPD);功率分隔线(PDS);超敏化;宽带;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号