Ultra wideband lumped Wilkinson power divider on gallium arsenide integrated passive device technology

摘要

In this letter, a novel lumped Wilkinson power divider (WPD) introducing capacitors on the isolation R of ultra wideband with good isolation and insertion loss (IL) performance is proposed with the help of gallium arsenide (GaAs) technology. With the even and odd method, the proposed WPD is better illustrated. The fractional bandwidth (FBW) is 104% (3–9.5 GHz). Besides, the return loss is better than 13.7 dB, and the IL is better than 0.62 dB within the passband. The isolation is better than 19.5 dB from 3 to 9.5 GHz. Finally, to better illustrate the design conception, it has been fabricated on GaAs integrated passive device technology with size of 1.37 × 0.971 mm~2, that is, 0.1 × 0.072 λ_g~2, measured by on-wafer probing. All the final results of the proposed WPD are reasonably matched well.