Optical semiconductor device, especially an optoelectronic integrated circuit for wideband optical communications, comprises a zinc oxide film between a gallium arsenide substrate and a gallium nitride-based light emitting-receiving layer

摘要

An optical semiconductor device comprises a ZnO film between a GaAs substrate and a light emitting/receiving layer of a GaN-based compound semiconductor. An optical semiconductor device comprises a ZnO film between a GaAs substrate and a light emitting/receiving layer of a GaN-based compound semiconductor. An Independent claim is also included for an optoelectronic integrated circuit having a structure as described above. Preferred Features: The GaN-based compound semiconductor is GaN, AlxGa1-xN, InxGa1-xN, InxGayAl1-x-yN or their solid solution.