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首页> 外文期刊>Plasma Chemistry and Plasma Processing >Plasma Characteristics of a Ni–Zn Ferrite Enhanced Internal-Type Inductively Coupled Plasma Source Operated at 2 and 13.56 MHz
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Plasma Characteristics of a Ni–Zn Ferrite Enhanced Internal-Type Inductively Coupled Plasma Source Operated at 2 and 13.56 MHz

机译:Ni-Zn铁氧体增强的内部类型感应耦合等离子体源的2和13.56 MHz的等离子体特性

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摘要

Plasma and electrical characteristics of an internal-type inductively coupled plasma source with a Ni–Zn ferrite module installed near the antenna were investigated for different rf power frequencies of 2 and 13.56 MHz. Due to the lower heating of the Ni–Zn ferrite module on the antenna for the operation at 2 MHz compared to the operation at 13.56 MHz, higher plasma density and lower rf rms antenna voltage were resulted for the operation at 2 MHz in addition to more stable plasma characteristics. By the application of 500 W of rf power to the source, a high plasma density of 8 × 1011 cm−3 which is about four times higher than that with 13.56 MHz could be obtained at the pressure of 10 mTorr Ar. When photoresist etch uniformity was measured for the operation with 2 MHz by etching photoresist on a 300 mm diameter substrate using 10 mTorr Ar/O2 (9:1) mixture, the etch uniformity of about 5.5% could be obtained.
机译:在2和13.56 MHz的不同射频功率频率下,研究了在天线附近安装了镍锌铁氧体模块的内部类型电感耦合等离子体源的等离子体和电学特性。由于与在13.56 MHz下工作相比,在2 MHz下工作时天线上的Ni-Zn铁氧体模块发热较低,因此在2 MHz下工作时产生了更高的等离子体密度和更低的rf rms天线电压。稳定的等离子体特性。通过将500 W的rf功率施加到光源,可以达到8×10 11 cm -3 的高等离子体密度,这是13.56 MHz时的高四倍。可以在10 mTorr Ar的压力下获得。通过使用10 mTorr Ar / O 2 (9:1)混合物在300 mm直径的基板上蚀刻光致抗蚀剂来测量在2 MHz的操作下光致抗蚀剂的蚀刻均匀性,蚀刻均匀性约为5.5%获得。

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