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Instability of a lattice semifluxon in a current-biased 0-π array of Josephson junctions

机译:电流偏置的约瑟夫森结的0-π阵列中晶格半流子的不稳定性

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We consider a one-dimensional parallel biased array of small Josephson junctions with a discontinuity point characterized by a phase jump of π in the phase difference. The system is described by a spatially nonauto-nomous discrete sine-Gordon equation. It is shown that in the infinitely long case there is a semifluxon spontaneously generated attached to the discontinuity point. Comparing the configurations of the semifluxon, we find an energy barrier similar to the Peierls-Nabarro barrier. We calculate numerically the minimum bias current density to overcome this barrier which is a function of the lattice spacing. It is found that the minimum bias current is the critical current for the existence of static lattice semifluxons. For bias current density above the minimum value, the semifluxon changes the polarity and releases 2π fluxons. An analytical approximation to the critical current as a function of the lattice spacing is presented.
机译:我们考虑一个小的约瑟夫森结的一维平行偏置阵列,其不连续点的特征在于相位差中的π跃迁。该系统由空间非自治离散正弦-Gordon方程描述。结果表明,在无限长的情况下,会自发地产生不连续点处附着的半氟x酮。比较半氟x的构型,我们发现了类似于Peierls-Nabarro势垒的能垒。我们通过数值计算克服该障碍的最小偏置电流密度,这是晶格间距的函数。发现最小偏置电流是存在静态晶格半荧光素的临界电流。当偏置电流密度高于最小值时,半氟康司酮会改变极性并释放2π通量。提出了一种临界电流的解析近似值,它是晶格间距的函数。

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