...
首页> 外文期刊>Physical review >Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content
【24h】

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

机译:低锰含量的(Ga,Mn)As层退火制备的GaAs中(Mn,Ga)As纳米晶的形成过程和超顺磁性

获取原文
获取原文并翻译 | 示例
           

摘要

X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by moderate-temperature (400 ℃) and high-temperature (560 ℃ and 630 ℃) annealing of (Ga,Mn)As layers with Mn concentrations between 0.1% and 2%, grown by molecular beam epitaxy at 270 ℃. Decomposition of (Ga,Mn)As is already observed at the lowest annealing temperature of 400 ℃ for layers with initial Mn content of 1% and 2%. Both cubic and hexagonal (Mn,Ga)As nanocrystals, with similar diameters of 7-10 nm, are observed to coexist in layers with an initial Mn content of 0.5% and 2% after higher-temperature annealing. Measurements of magnetization relaxation in the time span 0.1-10 000 s provide evidence for superparamagnetic properties of the (Mn,Ga)As nanocrystals, as well as for the absence of spin-glass dynamics. These findings point to weak coupling between nanocrystals even in layers with the highest nanocrystal density.
机译:利用X射线衍射,透射电子显微镜和磁化强度测量来研究嵌入GaAs中的富锰(Mn,Ga)As纳米晶体的结构和磁性。这些纳米复合材料是通过在270℃下通过分子束外延生长的(Ga,Mn)As层(Mn浓度在0.1%和2%之间)中温(400℃)和高温(560℃和630℃)退火获得的。 。初始Mn含量为1%和2%的层在最低退火温度400℃时已经观察到(Ga,Mn)As的分解。在高温退火后,具有相似的7-10 nm直径的立方和六方(Mn,Ga)As纳米晶体都共存于初始Mn含量为0.5%和2%的层中。测量时间跨度0.1-10 000 s中的磁化弛豫提供了(Mn,Ga)As纳米晶体的超顺磁性能的证据,以及没有自旋玻璃动力学的证据。这些发现表明,即使在具有最高纳米晶体密度的层中,纳米晶体之间的弱耦合。

著录项

  • 来源
    《Physical review》 |2011年第24期|p.245306.1-245306.8|共8页
  • 作者单位

    MAX-TV laboratory, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden,Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02-668 Warszawa, Poland;

    Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02-668 Warszawa, Poland;

    Department of Engineering Sciences, Uppsala University, P.O. Box 534, SE-751 21 Uppsala, Sweden;

    Center for Electron Nanoscopy, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark,Ernst Ruska-Centre and Peter Griinberg Institute, Research Centre Juelich, 52425 Juelich, Germany;

    Center for Electron Nanoscopy, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark;

    Center for Electron Nanoscopy, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark,Ernst Ruska-Centre and Peter Griinberg Institute, Research Centre Juelich, 52425 Juelich, Germany;

    Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02-668 Warszawa, Poland,Faculty of Physics, University of Warsaw, PL-00-681 Warszawa, Poland;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    magnetic semiconductors; microscopic defects (voids, inclusions, etc.);

    机译:磁性半导体微观缺陷(空洞;夹杂物等);

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号