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机译:低锰含量的(Ga,Mn)As层退火制备的GaAs中(Mn,Ga)As纳米晶的形成过程和超顺磁性
MAX-TV laboratory, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden,Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02-668 Warszawa, Poland;
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02-668 Warszawa, Poland;
Department of Engineering Sciences, Uppsala University, P.O. Box 534, SE-751 21 Uppsala, Sweden;
Center for Electron Nanoscopy, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark,Ernst Ruska-Centre and Peter Griinberg Institute, Research Centre Juelich, 52425 Juelich, Germany;
Center for Electron Nanoscopy, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark;
Center for Electron Nanoscopy, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark,Ernst Ruska-Centre and Peter Griinberg Institute, Research Centre Juelich, 52425 Juelich, Germany;
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02-668 Warszawa, Poland,Faculty of Physics, University of Warsaw, PL-00-681 Warszawa, Poland;
magnetic semiconductors; microscopic defects (voids, inclusions, etc.);
机译:高温退火(Ga,Mn)As / GaAs超晶格中二维约束超顺磁性(Mn,Ga)As纳米晶体的形成
机译:热退火对IngaAs / GaAs量子阱的结构光致发光的影响及低温GaAs层掺杂Mn
机译:精确(111)B GaAs衬底上单晶MnAs / AlAs / MnAs磁性隧道结的外延生长和磁性质:超薄GaAs缓冲层的影响
机译:精确111 B GaAs衬底上单晶MnAs / AlAs / MnAs磁性隧道结的外延生长和磁性能:超薄GaAs缓冲层的作用
机译:铁磁MnAs / GaAs异质结构和MnAs / InAs自旋LED的研究。
机译:模拟Zn1-xMnxSe / GaAs外延膜MnSe / ZnSe超晶格的远红外光谱并预测Zn1-xMnxSe中NP缺陷的杂质模式
机译:Ga(mn,Ga)as纳米晶的形成过程和超顺磁性能通过退火(Ga,mn)as低mn含量的Gaas制备纳米晶
机译:结构和磁性在Gaas中通过mn离子注入形成的mnas纳米团簇