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机译:种子纳米结构的金属有机气相外延过程中自限分布中的分解,扩散和生长速率各向异性
Tyndall National Institute, "Lee Mailings" Dyke Parade, Cork, Ireland and Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne, CH-1015 Lausanne, Switzerland;
Tyndall National Institute, "Lee Mailings" Dyke Parade, Cork, Ireland;
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne, CH-1015 Lausanne, Switzerland;
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne, CH-1015 Lausanne, Switzerland;
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne, CH-1015 Lausanne, Switzerland;
The Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom;
The Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom;
The Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom;
thin film structure and morphology; low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties; Ⅲ-Ⅴ semiconductors; theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation;
机译:金属有机气相外延在InP衬底上生长InGaAlAs选择性区域
机译:金属有机气相外延在Si(211)衬底上直接生长高质量CdTe外延层
机译:金属有机气相外延法在GaAs(001)衬底上生长GaN的选择性区域
机译:GaN金属有机气相外延反应动力学的多尺度生长速率分析
机译:通过金属有机气相外延工程化化合物半导体纳米结构。
机译:卤化物气相外延在锥形截肢型蓝宝石衬底上生长的α-GA2O3癫痫脱位的减少
机译:种子纳米结构金属有机气相外延过程中自限曲线的分解,扩散和生长速率各向异性
机译:胂含量对VpE(气相外延) - 氢化物技术制备的Ga(x)In(1-x)外延层组成,载流子浓度,迁移率和生长速率的影响